Sivers announces $3.4M program with SemiNex for InP light sources

Sweden’s Sivers Semiconductors and SemiNex Corporation, a US-based developer of high-power indium phosphide (InP) laser diodes, DFB lasers, semiconductor optical amplifiers (SOAs) and external cavity lasers, have announced a program for next-generation InP light sources for AI data center interconnects. The program is initially valued at approximately USD 3.4 million, Sivers said in a press release.

The program targets high-power external laser sources for co-packaged optics (CPO), high-channel-count DFB arrays for wavelength-multiplexed links, and SOA gain stages that extend optical reach as channel counts scale.  

“The advanced light sources needed for next-generation optical networking within AI factories are as crucial as the compute, memory and silicon photonics elements,” said Vickram Vathulya, Chief Executive Officer of Sivers Semiconductors. “We highly value our partnership with SemiNex to combine innovative technologies and deliver compelling light source solutions at scale to the market.”

“The optical layer is becoming the constraint on how far AI infrastructure can scale. The industry needs more power, at more wavelengths, at higher efficiency, and there is no way to get there by pushing today’s devices harder,” said Ronald Moore, Chief Executive Officer of SemiNex. “Those gains come out of the design and processing of the InP itself, and that is exactly where our two teams are working together.”