Infineon will supply Toyota with silicon carbide semiconductors

The automotive giant Toyota is implementing Infineon's silicon carbide power semiconductors in its electric bZ4X model. The new components have been integrated into the vehicle's key power systems to improve its energy efficiency, shorten charging time, and increase range. Infineon's CoolSiC MOSFET transistors utilize a trench gate structure, which reduces conduction resistance per chip area and shrinks the chip size, thereby cutting conduction and switching losses to boost the efficiency of electric vehicle power systems. The use of silicon carbide in power semiconductors reduces energy losses compared to traditional silicon solutions, offering lower switching losses, higher thermal resistance, and the ability to operate at higher voltages, which in practice enhances the overall efficiency of the drivetrain, impacting both vehicle range and charging time