US ITC confirms Innoscience infringes Infineon patent

The U.S. International Trade Commission (ITC) has issued a preliminary ruling that Innoscience violated an Infineon patent in the field of gallium nitride (GaN) technology. Simultaneously, the ITC upheld the validity of both patents asserted by Infineon in this proceeding. The final decision is expected on April 2, 2026. If confirmed, it could lead to an import ban into the U.S. for Innoscience products found to infringe the patents. Infineon views the ruling as further confirmation of the strength of its intellectual property and its consistent defense of its patent portfolio, emphasizing its commitment to protecting innovation and ensuring fair competition. In parallel, the German Patent and Trademark Office recently upheld the validity of an Infineon patent in Germany, which Infineon is asserting in a lawsuit at the Munich I Regional Court. That court had already ruled in August 2025 that Innoscience infringed another Infineon patent. A leading GaN supplier, Infineon states it holds roughly 450 GaN patent families. GaN is a key technology for compact, powerful, and energy-efficient power systems—from renewable energy and AI data centers to industrial automation and electric vehicles. Infineon masters all three major power semiconductor technologies: silicon, silicon carbide, and gallium nitride