MGT rolls out its 650V GaN FETs portfolio in normally-on and normally-off configuration
With the GPT65C0YME and GPT65O5XMA, MGT is presenting its first 650V GaN FETs with 230mΩ respectively 1Ω typical RDSon in compact DFN8080 (GPT65C0YME) and DFN5060 (GPT65O5XMA) SMD package.
In addition, the extremely low gate charges of 16nC (GPT65C0YME) or 7.5nC (GPT65O5XMA) reduce switching losses and makes it possible to work with very high switching frequencies, which saves energy and increases efficiency dramatically.
Both GaN FETs are ideal as primary switches in high-switching battery chargers, power adapters, LED lighting power supplies, wireless power devices, AC/DC or DC/DC converters and class D amplifiers.
Contact:
Manufacturer Group of Technology®
Canary Wharf, London
76 Discovery Dock West, 2 South Quay Square, London E14 9RT U.K.
Tel: +44 (0)20 8776 3510