Infineon first with 300 mm power GaN technology
Infineon Technologies says it has succeeded in developing the world’s first 300 mm power gallium nitride (GaN) wafer technology.
The breakthrough will help drive the market for GaN-based power semiconductors. Chip production on 300 mm wafers is technologically more advanced and significantly more efficient compared to 200 mm wafers, since the bigger wafer diameter fits 2.3 times as many chips per wafer.
“This remarkable success is the result of our innovative strength and the dedicated work of our global team to demonstrate our position as the innovation leader in GaN and power systems,” says Jochen Hanebeck, CEO of Infineon Technologies AG, in a press release. “The technological breakthrough will be an industry game-changer and enable us to unlock the full potential of gallium nitride. Nearly one year after the acquisition of GaN Systems, we are demonstrating again that we are determined to be a leader in the fast-growing GaN market. As a leader in power systems, Infineon is mastering all three relevant materials: silicon, silicon carbide and gallium nitride.”
GaN-based power semiconductors find fast adoption in industrial, automotive, and consumer, computing & communication applications, including power supplies for AI systems, solar inverters, chargers and adapters, and motor-control systems.
Infineon has succeeded in manufacturing 300 mm GaN wafers on an integrated pilot line in existing 300 mm silicon production in its power fab in Villach, Austria. The company says it will further scale GaN capacity aligned with market needs.
A significant advantage of 300 mm GaN technology is that it can utilise existing 300 mm silicon manufacturing equipment, since gallium nitride and silicon are very similar in manufacturing processes. Fully scaled 300 mm GaN production will contribute to GaN cost parity with silicon on R DS(on) level, which means cost parity for comparable Si and GaN products.
