II-VI to supply SiC substrates for Tianyu's power electronics
II‐VI Incorporated says it has been selected by Dongguan Tianyu Semiconductor Technology Co., Ltd., as the company's primary strategic partner for supply of 150 mm SiC substrates for power electronics.
The electrification of the transportation infrastructure is driving a market transition to power electronics based on SiC, a third-generation or wide-bandgap semiconductor, which enables power electronics to be smaller, more efficient, and with lower total system-level cost of ownership compared with state-of-the-art silicon-based devices. Tianyu is one of China’s first and largest SiC epitaxial wafer manufacturers. “We’re excited to support Tianyu’s high-volume requirements for SiC substrates,” says Sohail Khan, Executive Vice President, New Ventures & Wide-Bandgap Electronics Technologies Business Unit in a press release. “Tianyu will immediately benefit from our 150 mm SiC global production capacity in the U.S. and in China.” “II-VI is a world-class supplier of high-quality 150 mm silicon carbide substrates,” adds Li Xiguang, GM of Tianyu. “Together, Tianyu and II-VI will provide the high-quality and reliable supply chain and future 200 mm capability that will be critical to support the rapidly growing demand for SiC power electronics in the mega-markets of electric vehicles, renewable energy, smart grids, microgrids, and power supplies for data networks.”