STMicro manufactures first 200mm SiC wafers in Sweden
STMicroelectronics has manufactured the first 200mm (8-inch) Silicon-Carbide (SiC) bulk wafers for prototyping next-generation power devices from its facility in Norrköping, Sweden.
ST’s initial 200mm SiC wafers are described to be very high quality, with minimal yield-impacting and crystal-dislocation defects. The low defectivity has been achieved by building on the excellent know-how and expertise in SiC ingot growth technology developed by STMicroelectronics Silicon Carbide AB (formerly Norstel AB, which ST acquired in 2019). In addition to meeting the quality challenge, the transition to 200mm SiC substrates requires a step forward in manufacturing equipment and the overall support ecosystem performance. ST, in collaboration with technology partners covering the entire supply chain, is developing its own 200mm SiC manufacturing equipment and processes, a press release reads. ST currently manufactures its high-volume STPOWER SiC products on two 150mm wafer lines in its fabs in Catania (Italy) and Ang Mo Kio (Singapore) and performs assembly and test at its back-end sites in Shenzhen (China) and Bouskoura (Morocco). “The transition to 200mm SiC wafers will bring substantial advantages to our automotive and industrial customers as they accelerate the transition towards electrification of their systems and products”, says Marco Monti, President Automotive and Discrete Group, STMicroelectronics, in the press release. “It is important in driving economies of scale as product volumes ramp. Building robust know-how in our internal SiC ecosystem across the full manufacturing chain, from high-quality SiC substrates to large-scale front- and back-end production, boosts our flexibility and allows us to better control the improvement of yield and quality of the wafers.”