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© Samsung Components | December 20, 2017

Samsung with the ‘worlds smallest’ DRAM chip

The South Korean company says it has begun mass producing the industry’s first 2nd-generation of 10-nanometer class (1y-nm), 8-Gb DDR4 DRAM with improved energy efficiency – as well as the smallest dimensions.
“By developing innovative technologies in DRAM circuit design and process, we have broken through what has been a major barrier for DRAM scalability,” said Gyoyoung Jin, president of Memory Business at Samsung Electronics. “Through a rapid ramp-up of the 2nd-generation 10nm-class DRAM, we will expand our overall 10nm-class DRAM production more aggressively, in order to accommodate strong market demand and continue to strengthen our business competitiveness.”

The 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30% productivity gain over the company’s 1st–generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4’s performance levels and energy efficiency have been improved about 10 and 15 percent respectively, thanks to the company’s circuit design technology. The new 8Gb DDR4 can operate at 3,600 megabits per second (Mbps) per pin, compared to 3,200 Mbps of the company’s 1x-nm 8Gb DDR4, Samsung says in a statement.

Having completed this development, Samsung is now accelerating its plans for much faster introductions of next-generation DRAM chips and systems, including DDR5, HBM3, LPDDR5 and GDDR6, for use in enterprise servers, mobile devices, supercomputers, HPC systems and high-speed graphics cards.

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October 15 2018 11:56 pm V11.6.0-1