Toshiba’s 1W LED manufactured on 200mm silicon wafer

Toshiba’s new TL1F1 white LED series offers makers of general purpose and industrial LED lighting solutions a cost-competitive alternative to current LED packages. LED-chips are typically produced on 2- to 4-inch wafers with an expensive sapphire substrate. Toshiba and Bridgelux, have developed a process for manufacturing gallium nitride LEDs on 200mm silicon wafers, which Toshiba has brought to a new production line at Kaga Toshiba Electronics Corporation, a discrete products manufacturing facility in northern Japan. The new gallium nitride-on-silicon (GaN-on-Si) technology has enabled Toshiba to replace sapphire substrates and to produce the LED-chips on a much more cost-competitive silicon substrate. TL1F1 series LEDs benefit from a small size of only 6.4 mm × 5.0 mm × 1.35 mm (LxWxH), a high luminous flux ranging from 85 lm to 112 lm (typ.) at IF = 350 mA and a high colour rendering index of Ra= 80 (min.). The colour temperature of the white LEDs ranges from 3000 to 5000 K (typ.). Reflow soldering is also available. Designed for an operating temperature range from -40 up to +100°C, the new 1W LEDs are ideally suited for general lighting applications, bulbs, ceiling lighting, street lights and floodlights.