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Components | October 07, 2011

Ramtron samples high-speed serial F-RAM devices

Ramtron International announced pre-qualification sampling of a new family of 4- to 64-Kilobit (Kb) serial nonvolatile ferroelectric RAM (F-RAM) products.
Produced on Ramtron's ferroelectric memory process at its new U.S. wafer source, the new products feature 1-trillion (1e12) read/write cycles, low power consumption, and NoDelay writes.

The FM25040C, FM25C160C, and FM25640C are 4-, 16-, and 64-Kilobit (Kb) memory devices that perform write operations at bus speeds of up to 20MHz with an industry standard Serial Peripheral Interface (SPI). Data is written to the F-RAM memory array immediately after it is received by the device.

Unlike EEPROM and other nonvolatile memories that require data polling, F-RAM allows the next bus cycle to commence immediately. These characteristics make Ramtron's latest serial F-RAM devices an ideal nonvolatile memory for applications that require frequent and rapid writes, such as industrial controls and high-speed data logging.

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