© Infineon Products | August 01, 2017

OptiMOS™ Linear FET combines a low RDS(on) with a large Safe Operating Area

Infineon Technologies AG launches the OptiMOS™ Linear FET series. This new product family combines the state-of-the-art on-state resistance (R DS(on)) of a trench MOSFET with the wide Safe Operating Area of a planar MOSFET.
This is a product release announcement by Infineon Technologies. The issuer is solely responsible for its content.
This solves the trade-off between R DS(on) and linear mode capability. The OptiMOS Linear FET can operate in the saturation region of an enhanced mode MOSFET. It is the perfect fit for hot-swap, e-fuse, and protection applications commonly found in telecom and battery management systems (BMS).

Both, the rugged linear mode operation and the higher pulse current contribute to low conduction losses, faster start-up, and shorter down time. The OptiMOS Linear FET prevents damage at the load if there is a short circuit, by limiting high in-rush currents.


The OptiMOS Linear FET is available now in three voltage classes: 100 V, 150 V, and 200 V. They can be supplied in either a D²PAK or D²PAK 7pin package. These industry standard packages offer a compatible footprint for drop-in replacement. More information is available at


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August 13 2017 4:10 PM V8.5.9-1