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© Toshiba Business | May 14, 2014

Toshiba to replace Fab 2 at Yokkaichi Japan

Toshiba will demolish the No. 2 semiconductor fabrication facility (Fab 2) at Yokkaichi Operations, the company's NAND Flash memory plant in Mie prefecture, Japan, and replace it with a new fab on the same site.
Toshiba also entered into a non-binding memorandum of understanding with SanDisk Corporation to invest jointly in the new facility. The primary purpose of the new wafer fab is to secure space for converting existing Toshiba and SanDisk 2D NAND capacity to 3D NAND beginning in 2016.

Demolition work on the current Fab 2 will start in May with construction beginning in September 2014, with a target completion date of Summer 2015. The clean room within the new fab will be built in phases to align the clean room investment with the timing of conversion of 2D NAND capacity to 3D NAND. Construction of the initial cleanroom will be complete in time for 2016 output. Decisions on capacity conversion ramp and equipment investment, the start of production, and production levels in the new fab will reflect market trends.

The new fab will provide a supplementary facility for processes mainly dedicated to 3D NAND memory production, and work in close cooperation with Yokkaichi's other facilities.

Yasuo Naruke, Corporate Senior Vice President of Toshiba Corporation and President and CEO of Semiconductor & Storage Products Company, said, "Our determination to develop advanced technologies underlines our commitment to respond to continued demand of NAND flash memory. We are confident that our joint venture with SanDisk will allow us to produce cost competitive next generation memories at Yokkaichi. "

Sanjay Mehrotra, President and Chief Executive Officer of SanDisk, said: "We are pleased to continue our long-standing collaboration with Toshiba in this new wafer fab, which will advance our leadership in memory technology into the 3D NAND era."

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