Samsung with LPDDR2 memory using 20nm-class technology

“Samsung began expanding the market for 4Gb DRAM last year with the first mass-produced 30nm-class DRAM, and now we are working on capturing most of the advanced memory market with our new 20nm-class 4Gb DRAM,” said Wanhoon Hong, executive vice president, memory sales & marketing, Samsung Electronics. “In the second half of this year, we expect to strongly increase the portion of 20nm-class DRAM within our overall DRAM output to make the 4Gb DRAM line-up the mainstream product in DRAM production, and therefore keeping the leadership position in the premium market and strengthening our competitive edge.” Based on the 4Gb components, Samsung can deliver 2-Gigabyte (GB) solutions that boast razor-thin thickness of 0.8 millimeters (mm), which stack four 4Gb LPDDR2 chips in a single LPDDR2 package. This new package is approximately 20 percent thinner than 2GB packages that stack four 30nm-class 4Gb LPDDR2 chips. Also, the new 2GB package can process data at up to 1,066 megabits per second (Mbps), while spending the same amount of power as that of a previous 30nm-class 2GB package. Benefits of the new 20nm-class 4Gb LPDDR2 will help speed up the growth of the 4Gb DRAM market. Samsung expects the newly introduced 20nm-class 4Gb LPDDR2 will rapidly replace 30nm-class 2Gb-based 1GB LPDDR2 that was in limited supply at the 0.8 mm thickness.