Japan’s Air Water selects AIXTRON System

Following system installation, the company has announced the release of GaN-on-SiC on silicon substrates for this year, fully exploiting the system’s productivity. In order to address future market demand, Air Water is also considering upgrading the system to an AIXTRON AIX G5+, which can handle up to 5x200 mm (8-inch) silicon substrates. As compared to traditional silicon substrates, the additional SiC layer displays the advantage of protecting the Si substrate in the initial GaN nucleation process. Due to its crystal structure SiC is considered as an ideal template for the GaN growth.