Renesas and TSMC collaborates on 28nm MCU

The automotive MCUs employing this new 28nm process technology are slated for sample shipment and mass production in 2017 and 2020, respectively. Renesas and TSMC have collaborated closely on MCUs with on-chip flash memory since the 90nm technology generation. Four years after working together on 40nm MCU platform and production, the two companies are now extending their collaboration to develop 28nm MCUs aiming to pave the way for making future green and autonomous-driving vehicles more efficient and reliable. Through this collaboration, Renesas’ Metal-Oxide-Nitride-Oxide-Silicon (MONOS) eFlash technology will combine with TSMC’s 28nm high-K metal gate process technology to produce automotive MCUs for a broader range of applications such as autonomous vehicle sensor control, coordinated control among electronic control units (ECUs), fuel-efficient engine control for green vehicles, and highly efficient motor inverter control for electric vehicles.